surface mount schottky diode b at5 4 / a / c / s silicon epitaxial planar type features small surface mounting ty pe high reliability high speed ( t rr < 5 ns ) mechanical dat a case : sot -23 termi nals : solder plated, solderable per mil-st d-750, method 2026 mounting p osition : any maximum ratings (at t a =25 o c unless otherwise noted) parameter conditions symbol min. typ. max. unit repetitive peak reverse voltage v rrm 30 v reverse voltage v r 30 v peak forward surge current t p < 10 ms i fsm 600 ma repetitive peak forward current t p < 1 s i frm 300 ma forward current i f 200 ma junction temperature t j 125 o c storage temperature t stg -55 +150 o c f o r m o s a m s sot-23 dimensions in inches and (millimeters) electrical characteristics (at t a =25 o c unless otherwise noted) parameter conditions symbol min. typ. max. unit i f = 0.1ma v f 0.240 v i f = 1ma v f 0.320 v i f = 10ma v f 0.400 v i f = 30ma v f 0.500 v i f = 100ma v f 0.800 v reverse current v r = 25v i r 2.0 ua diode capacitance v r = 1v , f = 1mhz c d 10.0 pf reverse recovery time i f =10ma, v r = 10ma, i rr = 0.1 x i r , r l =100 ohm t rr 5 ns forward voltage 0.033 (0.85) 0.045 (1.15) r 0.05 (0.002) 0.055 (1.40) 0.047 (1.20) 0.102 (2.60) 0.094 (2.40) 0.028 (0.70) 0.020 (0.50) (a) (b) (c) 0 . 1 1 8 ( 3 . 0 0 ) 0 . 1 1 0 ( 2 . 8 0 ) . 0 7 9 ( 2 . 0 0 ) . 0 7 1 ( 1 . 8 0 ) 0 . 0 4 0 ( 1 . 0 2 ) 0 . 0 3 5 ( 0 . 8 8 ) 0 . 0 1 7 ( 0 . 4 2 ) 0 . 0 1 5 ( 0 . 3 8 ) a c b a c b a c b a c b marking code BAT54 ba t54a BAT54c ba t54s kl1 kl2 kl3 kl4
rating and characteristic curves for each diode (BAT54 / a / c / s) notes: notes: ? t recovery time equivalent test circuit 820 ohm +10v 2 k 0.1 uf 100uh 0.1 uf dut 50 ohm output pulse generator 50 ohm input sampling oscilloscope i f t r v r t 10% 90% t p t r t ir(rec)=1 ma output pulse (if=ir=10ma;measured at ir(rec)=1ma) 1. a2.0 kohm variable resistor adjusted for a forward current (if) of 10ma. 2. input pulse is adjusted so ir(peak) is equal to 10 ma. 3. tp >> trr. notes : handbook, halfpag e 1.2 0.8 0.4 0 (3) (2) (1) (3) (2) (1) 0 1 0 2 0 3 0 (1) (2) (3) h 0 1 0 2 0 3 0 0 5 10 15 f o r w a r d c u r r e n t , ( m a ) forward voltage,(v) o (1) ta = 125 c oo (2) ta = 85 c (3) ta = 25 c fig.1-typical forward characteristics r e v e r s e l e a k a g e c u r r e n t , ( u a ) reverse voltage, (v) fig.2 - leakage current characteristics 1000 100 10 1 0.1 1000 100 10 1 0.1 o (1) ta = 125 c oo (2) ta = 85 c (3) ta = 25 c fig.3-typical junction capacit ance j u n c t i o n c a p a c i t a n c e , ( p f ) reverse voltage,(v)
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